发表于:2005-08-22 18:15:00
2楼
Part Number = BUH513
Description = Si NPN Power Bipolar Junction Transistor
Manufacturer = ST Microelectronics
V(BR)CEO (V) = 700
I(C) Abs.(A) Collector Current = 8.0
Absolute Max. Power Diss. (W) = 50
I(CBO) Max. (A) = 1.0m
@V(CBO) (V) (Test Condition) = 1.3k
V(CE)sat Max.(V) = 1.5
@I(C) (A) (Test Condition) = 5.0
@I(B) (A) (Test Condition) = 1.3
h(FE) Min. Static Current Gain = 6.0
@I(C) (A) (Test Condition) = 5.0
@V(CE) (V) (Test Condition) = 5.0
t(s) Max. (s) Storage time. = 3.9u
t(f) Max. (s) Fall time. = 280n
Package = TO-218var
Military = N
记得这里用大功率三极管推挽工作,效率会高一点,偕波会小一点……